| PART |
Description |
Maker |
| AM-162PIN AMC-162SMA AMC-AMS-162 AMS-162PIN |
10-100 MHz, low noise amplifier, 12.5 dB gain
Low Noise Amplifier/ 12.5 dB Gain/ 10 - 100 MHz
JT 12C 8#20 4#16 SKT RECP
Circular Connector; No. of Contacts:18; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier, 12.5 dB Gain, 10 - 100 MHz
|
MA-Com
Tyco Electronics
|
| EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable
Dual, 630MHz, Low Noise Amplifier with Enable
From old datasheet system
630MHz Gain of 5 Low Noise Amplifiers
630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| 2SC4703 2SC4703NE46234 2SC4703SH |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
BJT
|
NEC[NEC]
NEC Corp.
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| MGA-17516-BLKG MGA-17516-TR1G |
Low Noise, High Linearity Match Pair Low Noise Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| TGA4600-EPU |
60 GHz Low-Noise Amplifier
60GHz Low Noise Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier
Low Noise Amplifier 1.5 - 1.6 GHz
GT 35C 7#12,28#16 SKT RECP
|
MA-Com
MACOM[Tyco Electronics]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AN-940 |
Low Noise Amplifier Selection Guide for Optimal Noise Performance
|
Analog Devices
|
| L1935 |
Low Noise Amplifier 1800-1950 MHz, 35 dB Gain, 0.9dB Noise Figure
|
PDI[PREMIER DEVICES, INC.]
|
