| PART |
Description |
Maker |
| BGA231L7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP740 BFP740-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| RQG1003UQAQF RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| SGL-0263 SGL-0263Z |
1400 - 2500 MHz Silicon Germanium Cascadable Low Noise Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
| RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| BGA622L7 |
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
|
Infineon Technologies AG
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
