| PART |
Description |
Maker |
| 15N60 15N60G-T47-T 15N60L-T47-T 15N60L-TF1-T 15N60 |
15A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 15A条（丁）|52AA
15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| APT6045BVR |
POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| MUR3040PT MUR3050PT MUR3060PT RURH1560CC RURH1540C |
15A, 400V - 600V Ultrafast Dual Diodes 15A条，分别00V - 600V的超快双二极
15A, 400V - 600V Ultrafast Dual Diodes 15 A, 400 V, SILICON, RECTIFIER DIODE
(MUR3040PT / MUR3060PT) 400V - 600V Ultrafast Dual Diodes
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| KIA78L05BPV KIA78L06BPV KIA78L08BPV KIA78L09BPV KI |
6V/0.15A Regulator
9V/0.15A Regulator
10V/0.15A Regulator
12V/0.15A Regulator
15V/0.15A Regulator
18V/0.15A Regulator
20V/0.15A Regulator
24V/0.15A Regulator
0.15A 3-Terminal Voltage Regulator
|
Korea Electronics (KEC)
|
| ISL9K1560G ISL9K1560G3 |
15A, 600V Stealth Dual Diode
15A 600V Stealth Dual Diode
15A, 600V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| PS21964-ST |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| HFA15TB60 HFA15TB60-1 |
600V 15A HEXFRED Discrete Diode in a TO-220AC package
600V 15A HEXFRED Discrete Diode in a TO-262 package
|
International Rectifier
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
