| PART |
Description |
Maker |
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FM600TU-07A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| UFL60FA60P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB60FA60P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB280FA40 |
Insulated Ultrafast Rectifier Module, 280 A
|
Vishay Siliconix
|
| UFB200FA60P |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFL120FA60P |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
