| PART |
Description |
Maker |
| 2N4216 |
SCR, V(DRM) = 200V TO 299.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| TA20401201DH TA20401203DH POWEREXINC-C430F TC20172 |
1884 A, SCR
4396 A, SCR
2198 A, SCR
471 A, SCR
549.5 A, SCR
78.5 A, 200 V, SCR
1570 A, SCR
196.25 A, SCR
1256 A, SCR
863.5 A, SCR
235.5 A, SCR
392.5 A, SCR
1413 A, SCR
125.6 A, 500 V, SCR
1177.5 A, SCR
|
POWEREX INC
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| STK13C68-C25 STK13C68-5S25 STK13C68-5S45 STK13C68- |
FUSE 5A SLO-BLO PICO
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:50uA
PC Board Fuse; Current Rating:250mA; Voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Very Fast Acting; Leaded Process Compatible:No
PC Board Fuse; Current Rating:500mA; Voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Very Fast Acting; Leaded Process Compatible:No
PC Board Fuse; Current Rating:500mA; Voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Time Delay; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
PC Board Fuse; Current Rating:375mA; Voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Time Delay; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
Cartridge Fuse; Current Rating:0.062A; Voltage Rating:125V; Fuse Type:Very Fast Acting; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Voltage Rating:125V RoHS Compliant: No
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Microchip Technology, Inc.
Electronic Theatre Controls, Inc.
|
| B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五（无线资源管理）|5A我（翻译
|
SCHURTER AG
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| VSKT25016PBF VSKT17016PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
| BT152-600 BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| W4DA55B W4DC55B W4DC55P W4DA55P W4DA55PB W4DA25PB |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|55A I(T)
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|55A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|55A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|55A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|55A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.6KV V(RRM)|25A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|25A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|25A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|25A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|55A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.6KV V(RRM)|55A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|55A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|55A I(T)
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅倍增| 1KV交五（无线资源管理）|25A我（翻译
THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|25A I(T) 晶闸管模块|可控硅倍增| 1.4KV五（无线资源管理）|25A我（翻译
|
TE Connectivity, Ltd.
|
