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LC103M - EIA Class 3, Semiconductor Type Reduced Titanite Disc Ceramic Capacitors

LC103M_4573860.PDF Datasheet


 Full text search : EIA Class 3, Semiconductor Type Reduced Titanite Disc Ceramic Capacitors
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PART Description Maker
LC103M LC104M EIA Class 3, Semiconductor Type Reduced Titanite Disc Ceramic Capacitors
Cornell Dubilier Electronics
SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA):   Package: CMPAK-6
3-Phase Bridge Rectifier IGBT braking chopper
Semikron International
S3902 S3903 S3903-1024Q S3903-512Q MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
Hamamatsu Photonics
04023C332JAT2A 04023C471JAT2A 06033C473M4T2A 04023 X7R formulations are called “temperature stable ceramics and fall into EIA Class II materials.
X7R Dielectric General Specifications
   X7R Dielectric General Specifications
   General Specifications
   X7R formulations are called “temperature stable?ceramics and fall into EIA Class II materials.
AVX Corporation
CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
ISL8563CP ISL8563CB ISL8563 ISL8563IB-T ISL8563CB- 3V to 5.5V, 1Microamp, 250kbps, EIA/TIA-562, EIA/TIA-232 Transmitters/Receivers
3V to 5.5V 1Microamp 250kbps EIA/TIA-562 EIA/TIA-232 Transmitters/Receivers
RS-232/RS-562 Transceiver, 2T/2R, 3V to 5.5V, 250kbps, Manual Powerdown with Receivers Active
3V to 5.5V/ 1Microamp/ 250kbps/ EIA/TIA-562/ EIA/TIA-232 Transmitters/Receivers
INTERSIL[Intersil Corporation]
IRFP23N50LPBF 23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
International Rectifier
1SS300 Small package Small total capacitance :CT = 2.2 pF(Typ)Fast reverse recovery time :trr=1.6 ns(Typ)
TY Semiconductor Co., Ltd
1SS193 Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Small Total Capacitance :CT = 0.9pF(Typ.)
TY Semiconductor Co., Ltd
500L-058X181-502 500T-058X071-501 500T-058X071-502 5000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
500:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER
4000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
400:5 A, 3 % ACCURACY CLASS, CURRENT TRANSFORMER
750:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
2500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1200:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
GE Industrial Systems
AN80T05 Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd
Panasonic Semiconductor
 
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