| PART |
Description |
Maker |
| GM1015 |
Excellent HFE Linearity HFE : HFE(0.1mA)/HFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| FCX1149A |
2W power dissipation, Excellent HFE characteristics up to 10 Amps.
|
TY Semiconductor Co., Ltd
|
| KST9012 |
PNP Transistor
Excellent hFE liearity Collector Current :IC=-0.5A
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BCX69 BCX69-25 BCX69-16 BCX69-10 |
PNP Silicon AF Transistors 自动对焦进步党硅晶体
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
General Purpose Transistors - SOT89; VCEO=20V; hFE=85..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250
|
INFINEON[Infineon Technologies AG]
|
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCX68 BCX68-25 BCX68-10 BCX68-16 |
General Purpose Transistors - SOT89; VCEO=20V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=20 V; hFE=85...160
General Purpose Transistors - SOT89; VCEO=20V; hFE=160...375
NPN Silicon AF Transistors
|
INFINEON[Infineon Technologies AG]
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
|
Bytes
|
| 2SC3182 |
Good Linearity of hFE
|
Inchange Semiconductor ...
|
| 2SC3181 |
Good Linearity of hFE
|
Inchange Semiconductor ...
|
