| PART |
Description |
Maker |
| 1PS181 |
High-Speed Double Diode 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BAS70-07S BAS70_07S_3 |
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
Schottky barrier double diode
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BAT15-099R BAT1599R Q62702-A0043 |
RES CHIP 1K QW 5% SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BB207 BB207-15 |
Low voltage variable capacitance double diode
FM variable capacitance double diode
|
NXP Semiconductors
|
| 5Y3GT |
DOUBLE DIODE
|
ETC[ETC]
|
| CK1024 |
FILLED DOUBLE DIODE
|
Raytheon Company
|
| BAW56N3 |
High -Speed double diode
|
CYSTEKEC[Cystech Electonics Corp.]
|
| BAV99 |
HIGH-SPEED DOUBLE DIODE
|
NXP Semiconductors
Philips Semiconductors
|
| BAV170 |
Low-leakage Double Diode
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| BAS28.215 |
High-speed double diode
|
NXP Semiconductors
|
| PBYR2150CT |
Schottky barrier double diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
