| PART |
Description |
Maker |
| 1H4GTG 1H5GT 1H5GT/G |
DIODE TRIODE AMPLIFIER
|
List of Unclassifed Manufacturers
|
| 6B4G |
TRIODE POWER AMPLIFIER
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SM12J45A SM12G45 SM12G45A SM12J45 |
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
http://
Toshiba, Corp.
|
| 3CPX5000A7 |
The 3CPX5000A7 high-mu triode
The 3CPX5000A7 high-mu triode
|
Communications & Power Industries, Inc.
ETC
List of Unclassifed Manufacturers
|
| 3CW20000A7 |
The 3CW20,000A7 is a high-mu power triode
The 3CW20,000A7 is a high-mu power triode
|
Communications & Power Industries, Inc.
|
| 3CW20000H7 |
The 3CW20,000H7 is a high-mu power triode
The 3CW20,000H7 is a high-mu power triode
|
Communications & Power Industries, Inc.
|
| SM6J45A SM6G45 SM6G45A SM6J45 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TO-220 .75H .57W .5D W/MTG TAB
Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| EC88 |
U.H.F. TRIODE
|
NXP Semiconductors
|
| DC11 |
TRIODE
|
ETC
|
| 15EA7 |
DOUBLE-TRIODE
|
List of Unclassifed Manufacturers
|
| ECL86 |
Triode Pentode
|
Philipe
|
| PCL82 |
Triode Pentode
|
Mazda
|
