| PART |
Description |
Maker |
| PTFB201402FC PTFB201402FCV1R0XTMA1 PTFB201402FCV1R |
High Power RF LDMOS Field Effect Transistor
|
Infineon Technologies A...
|
| PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
| PTFB241402FV1R250 |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ?2400 MHz
|
Infineon Technologies A...
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
| MAPLST0810-090CF MAPLST0810-090CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
