| PART |
Description |
Maker |
| TA48M0033F TA48M00345F TA48M003F TA48M004F TA48M00 |
150PF 100V 5% MONOLITH CERM CAP
15PF 100V 5% MONOLITH CERM CAP
120PF 100V 5% MONOLITH CERM CAP
2.5V, 3V, 3.3V, 3.45V, 4V, 5V THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR 2.5VV.3V.45V4V电压V的三端低压差电压调节
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| V53C104HK55L V53C104HP60L |
IC OPAMP DUAL 16V DIP8
ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 超高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| EDI8832C120QB EDI8832C70QB |
High Performance 256K Monolithic SRAM
|
Electronic Devices, Inc.
|
| V53C832L30 |
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
| V53C104AP-100L |
IC REGULATOR 3.3V 1A TO220FP
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
| V53C104P-70 V53C104P-70L V53C104P-12 V53C104P-12L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
TRANS NPN DARL 100V 8A TO022FP
|
Mosel Vitelic, Corp.
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
