| PART |
Description |
Maker |
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BF2030R BF2030W BF2030 |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF998 BF998W BF998R |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS AG
|
| BF2040R BF2040W BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
New Jersey Semi-Conduct...
|
| BF996SA BF996SB |
N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay
|
| BF996S BF996SA BF996SB |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
|
Vishay Siliconix
|
| Q62702-F1587 BF1012W |
From old datasheet system
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
