| PART |
Description |
Maker |
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAT54ATBL-AN3-R |
SCHOTTKY BARRIER (DUAL) DIODES
|
Unisonic Technologies
|
| BAT54CWG-AL3-R BAT54CWL-AL3-R |
SCHOTTKY BARRIER (DUAL) DIODES
|
Unisonic Technologies
|
| MBD110DWT1 MBD330D MBD770DWT1 MBD330DWT1 |
Dual Schottky Barrier Diodes
|
MOTOROLA[Motorola, Inc]
|
| BAS70-04W BAS70-05W BAS70WSERIES BAS70W BAS70-06W |
Schottky barrier double diodes
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
CSCA-A Series Hall-effect based, open-loop current sensor, Molex-type connector, 300 A rms nominal, ±900 A range
|
http://
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| LBAT54SWT1 |
Dual Series Schottky Barrier Diodes
|
Leshan Radio Company
|
| BAT54SWT1 |
Dual Series Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| LBAT54C LBAT54CLT1 |
Dual Series Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| LBAT54CWT1 |
Dual Series Schottky Barrier Diodes
|
Leshan Radio Company
|
| BAT54SLT1G BAT54SLT1 |
Dual Series Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
