| PART |
Description |
Maker |
| EM620FV8BT |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| EM6110FR32AW-10L EM6110FR8AW-10L EM6110FS32AW-10L |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| KM68FS2000 |
256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
| IS62WV2568BLL-55BLI IS62WV2568ALL-70BI IS62WV2568B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PBGA36
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| BS62LV2006HCG55 BS62LV2006HCG70 BS62LV2006HI70 BS6 |
Very Low Power CMOS SRAM 256K X 8 bit 非常低功耗CMOS SRAM 256K × 8
|
BRILLIANCE SEMICONDUCTOR, INC.
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
