| PART |
Description |
Maker |
| BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 8A条（丁）|63AB
|
International Rectifier, Corp.
|
| CDST-21-HF CDST-21A-HF CDST-21C-HF CDST-21S-HF |
Halogen Free Switching Diodes Array, V-RRM=250V, V-R=250V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| FQAF16N25C |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFN214B IRFN214BTAFP001 |
250V N-Channel B-FET
250V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW614B IRFI614B IRFI614BTUFP001 IRFW614BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW614A
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFI614A
|
FAIRCHILD[Fairchild Semiconductor]
|
| BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470
TRANSISTOR|BJT|NPN|250VV(BR)CEO|100MAI(C)|TO-126
|
Continental Device India Limited
|
| CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE.
1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
|
Continental Device India Limited
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQD4P25TM FQD4P25TMWS |
P-Channel QFETMOSFET -250V, -3.1A, 2.1
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
