| PART |
Description |
Maker |
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI4850EY-T1-GE3 SI4850EY09 |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI9803DY |
20-V (D-S) Single
P-Channel Reduced Qg Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7388DP |
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
|
Vishay Intertechnology, Inc.
|
| SI4800BDY SI4800BDY-T1-E3 |
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
| STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MT49H16M16 MT49H16M16FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
