| PART |
Description |
Maker |
| RJK6011DJE-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPH-E0 RJK6025DPH-E0T2 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DJE-00Z0 RJK6002DJE-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DPE RJK6002DPE-00J3 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6012DPP-E0 |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| PS7341 PS7341-1B PS7341L-1B PS7341L-1B-E3 PS7341L- |
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器)
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET 高隔离电引脚DIP OCMOS场效通道OCMOS场效应管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
