| PART |
Description |
Maker |
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| KU035N06P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU047N08P KU047N08P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS086N10F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU035N06P |
N-ch Trench MOS FET
|
KEC
|
| 2SK3576 2SK3576-T1B 2SK3576-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
|
