| PART |
Description |
Maker |
| PD8932 PD893D2 |
InGaAs AVALANCHE PHOTO DIODES
|
Mitsubishi Electric Semiconductor
|
| NR6800 |
80 um InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| PL10724EJ01V0DS |
φ 30 μm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC
|
Renesas Electronics Corporation
|
| NDL5531P NDL5531P1C NDL5531P1D NDL5531P2C NDL5531P |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信30毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| OP955 |
PIN Sili con Pho todiode
|
Optek Technology
ETC
OPTEK[OPTEK Technologies]
|
| OP905 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
|
| OP750D OP750A OP750B OP750C |
NPN Pho totransistor with Base- Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
| OSM960 OSM960P |
Six Ele ment SMD Pho todiode Ar ray
|
Optek Technology
OPTEK Technologies
|
| PD-1170 |
InGaAs PIN PHOTODIODE 3 mm InGaAs PIN Photdiode with TO-5 Package
|
Optoway Technology Inc
|
