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V53C8258H35 - HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM 高性能256K × 8 EDO公司页面模式的CMOS动态随机存储器

V53C8258H35_4359883.PDF Datasheet


 Full text search : HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM 高性能256K × 8 EDO公司页面模式的CMOS动态随机存储器
 Product Description search : HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM 高性能256K × 8 EDO公司页面模式的CMOS动态随机存储器


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
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HP[Agilent(Hewlett-Packard)]
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SIEMENS A G
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ISSI[Integrated Silicon Solution, Inc]
 
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