| PART |
Description |
Maker |
| CMLM2205 |
MULTI DISCRETE MODULESURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 600 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| HN7G02FU |
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender
HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| HI1-774J5 HI3-674ALD5 HI3-674ATD/883 HI1-774AK5 HI |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0525-5 91; Contact Mating Area Plating: Gold
Converter IC 转换IC
Converter IC 转换器IC
|
Rochester Electronics, LLC
Intersil, Corp.
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 8ETX06 8ETX06-1 8ETX06FP 8ETX06S |
600V 8A HyperFast Discrete Diode in a D2-Pak package
600V 8A HyperFast Discrete Diode in a TO-220 FullPack package
600V 8A HyperFast Discrete Diode in a TO-262 package
Hyperfast Rectifier
|
IRF[International Rectifier]
|
