| PART |
Description |
Maker |
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
256MB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| HYS72V128300GR-7-A HYS72V128300GR-75-A HYS72V2563 |
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 1GB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 1GB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC100 (2-2-2) 1-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
PC133 Registered SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| IBM13T16644NPA |
16M x 64 PC100 SDRAM(1MB PC100 同步动态RAM)
|
IBM Microeletronics
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M390S2858CTU-C7C M390S2858CTU M390S2858CTU-C1H M39 |
PC133/PC100 Low Profile Registered DIMM
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD. Low Profile Registered DIMM. Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| KMM366S163BT-GL KMM366S1623BT KMM366S163BT-GB KMM3 |
PC100 SDRAM module. 100 MHz, 10 ns speed
DIODE, ZENER, 6.8V, 5%, 1/2W, MLL34&
DIODE ZENER 6.2V 0.5W 5% IZT=20MA DO-2
PC100 SDRAM module. 125 MHz, 8 ns speed
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB52F328DC-75BL |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 133 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC133 SDRAM
x64 SDRAM Module X64的内存模
|
Elpida Memory
Vishay Intertechnology, Inc.
|
| IBM13T4644MPE-360T |
x64 SDRAM Module
4M x 64 PC100 SDRAM SO DIMM（Small Outline Dual In-line Memory Module4M x 64 PC100小外形双列直插式同步动态RAM模块) 4米64苏PC100的SDRAM的内存（小外型双线内存模组）米64 PC100的小外形双列直插式同步动态内存模块）
|
International Business Machines, Corp.
|
| W3DG648V10D2 W3DG648V-D2 W3DG648V7D2 W3DG648V75D2 |
64MB- 8Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
