| PART |
Description |
Maker |
| SF61 SF63 SF67 |
(SF61 - SF68) Super Fast Rectifiers
|
Taiwan Semiconductor
|
| BL-B4141-L |
LED GaAsP/GaP Hi-Eff Red Low current requirement High efficiency.
|
BRIGHT LED ELECTRONICS CORP
|
| HMMC-3128 |
HMMC-3128 · SO-8 SMT 0.5-12GHz high eff. GaAs HBT prescalers
|
Agilent (Hewlett-Packard)
|
| MO1812 MO1812-681M MO1812-682K MO1812-683K MO1812- |
Plastic Molded Inductor High L (1μH-330μH)
Plastic Moulded Inductor High L
|
PREMO CORPORATION S.L
|
| GI751 GI756 GI750 GI752 GI758 GI754 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x25 mm; Packaging: Bulk
High Voltage Plastic Rectifier(高压塑胶整流
HIGH CURRENT PLASTIC RECTIFIER
|
GE Security, Inc.
GE[General Semiconductor]
|
| BL-HE133A-TRB |
Hi-Eff Red Suitable for all SMT assembly methods.
|
Bright LED Electronics Corp.
|
| BL-HE134A-TRB |
Hi-Eff Red Suitable for all SMT assembly methods.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-HX133A-TRB |
Hi-Eff Green Suitable for all SMT assembly methods.
|
Bright LED Electronics Corp.
|
| BL-R4531 |
GaAsP/GaP hi-eff red Low power consumption.
|
BRIGHT LED ELECTRONICS CORP
|
| BD-A514RE |
hi-eff red chips, which are made from GaAsP on GaP substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BA-8E9UW |
hi-eff red chips, which are made from GaAsP on GaP substrate
|
BRIGHT LED ELECTRONICS CORP
|
