Part Number Hot Search : 
M050212 GS88132B SG1527AL 10A102 SMA1021 EN7465 RY78600 EPA225
Product Description
Full Text Search

MRF8S21200HSR6 - RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF8S21200HSR6_4305627.PDF Datasheet


 Full text search : RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
 Product Description search : RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
IRF540_D ON0285 IRF540/D IRF540-D IRF540 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
MTM15N20 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MRF18085B MRF18085BLSR3 MRF18085BR3 RF Power Field Effect Transistors
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MAPL-000817-015CPC RF Power Field Effect Transistor
Tyco Electronics
MRF141 RF FIELD-EFFECT POWER TRANSISTOR
Advanced Semiconductor
MRF187 MRF187R3 MRF187SR3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MTP6N10 POWER FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
MRF8S21200HSR6 siliconix MRF8S21200HSR6 Precision MRF8S21200HSR6 surface MRF8S21200HSR6 Server MRF8S21200HSR6 differential
MRF8S21200HSR6 atmel MRF8S21200HSR6 Signal MRF8S21200HSR6 synthesizer rom MRF8S21200HSR6 m85049 MRF8S21200HSR6 complimentary
 

 

Price & Availability of MRF8S21200HSR6

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.28274989128113