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TMP86P807MG - Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制

TMP86P807MG_4230208.PDF Datasheet


Part No.	TMP86P807MG
Description	Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
File Size	1,313.90K / 160 Page
Maker	Toshiba, Corp.
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Full text search : Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制

Product Description search : Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制

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1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1	0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance. 0.5W SILICON ZENER DIODES Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管） PC 4/ 5-ST-7,62 .5W硅稳压二极管 Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.	JGD[Jinan Gude Electronic Device] 济南固锝电子器件有限公司 Jinan Gude Electronic Device Co., Ltd. Semtech, Corp. 娴???洪??靛??ㄤ欢?????? Jinan Gude Electronic D...
UT2316L-AE3-R UT2316-AE3-R	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK N-CHANNEL ENHANCEMENT MODE	Unisonic Technologies Co., Ltd. 友顺科技股份有限公司
STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD	意法半导
DF3A8.2FV	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
KDZ93V	ZENER DIODE CONSTANT VOLTAGE REGULATION APPLICATION	KEC(Korea Electronics)
CMF02	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Switching Mode Power Supply Applications	Toshiba Corporation Toshiba Semiconductor

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