| PART |
Description |
Maker |
| UG42W6424GSG UG42W6448GSG UG42W6428GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| UG42S6442HSG-PL UG42S6442HSG-PH |
16M Bytes (2M x 64 bits) PC100 SDRAM Unbuffered SODIMM
|
Electronic Theatre Controls, Inc.
|
| UG42S6442HSG UG42S6442HSG-PL UG42S6442HSG-PH |
16M BYTES (2M X 64 BITS) PC100 SDRAM UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
ETC
|
| EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| TC58FVM7T2 TC58FVM7T2AFT65 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位）的CMOS闪存
|
Toshiba Semiconductor
Toshiba, Corp.
|
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| HYM72V1625GS-50 |
16M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
INFINEON TECHNOLOGIES AG
|
| MT18LD1672AG-6X |
16M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
|
| EDE2508ABSE-5C-E EDE2516ABSE-5C-E EDE2516ABSE-6E-E |
256M bits DDR2 SDRAM 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
