| PART |
Description |
Maker |
| 28F128P30 |
StrataFlash Embedded Memory
|
Intel Corporation
|
| 28F128P33 |
StrataFlash Embedded Memory
|
Intel
|
| JS28F256P30B95 PC28F256P30B85 PC28F256P30T85 TE28F |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
| PH28F128L18T85 PH28F256L18T85 PH28F640L18T85 JZ48F |
StrataFlash Wireless Memory 无线的StrataFlash存储
StrataFlash Wireless Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
|
Intel Corp.
Intel, Corp.
|
| 28F640P3 PF48F3P0ZB00 PF48F2P0ZB00 PC48F0P0VB00 PC |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:5m; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
Intel StrataFlash Embedded Memory 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Intel StrataFlash Embedded Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
COAXIAL CABLE; COAXIAL RG/U TYPE:11; IMPEDANCE 75OHM CONDUCTOR SIZE AWG:14; NO. STRANDS X STRAND SIZE: SOLID; JACKET MATERIAL:POLYVINYLCHLORIDE (PVC); CONDUCTOR MATERIAL:STEEL; CONDUCTOR PLATING COPPER; JACKET COLOR:BLAC 英特尔StrataFlash嵌入式存储器
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
Intel StrataFlash Embedded Memory 英特尔StrataFlash嵌入式存储器
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-41 英特尔StrataFlash嵌入式存储器
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle 英特尔StrataFlash嵌入式存储器
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A 英特尔StrataFlash嵌入式存储器
Strata Flash Memory / 1 Gbit P30 Family
CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41
Intel StrataFlash Embedded Memory
|
Intel Corp.
http://
Intel, Corp.
Intel Corporation
|
| JS28F128J3A |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| TE28F320J3C JS28F128J3A-110 JS28F128J3A-115 JS28F1 |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| 28F128L18 28F256L18 |
StrataFlash Wireless Memory
|
Numonyx B.V
|
| 28F320J5 28F640J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
|
Intel
|
| 28F128J3A 28F320J3A 28F640J3A 29066706 |
3 Volt Intel? StrataFlash? Memory
From old datasheet system
|
Intel
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| DA28F320J5-120 DT28F320J5A-120 DA28F640J5A-150 DA2 |
EEPROM|FLASH|2MX16/4MX8|CMOS|SOP|56PIN|PLASTIC
5 Volt Intel StrataFlash? Memory
5 Volt Intel StrataFlash庐 Memory
|
Intel Corporation
|
