| PART |
Description |
Maker |
| P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Presettable Synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Microsemi
|
| CM600DU-12NFH |
Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-12H |
Single IGBTMOD 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| P6KEXXXAG P6KEXXXA P6KEXXXARL P6KEXXXARLG P6KE18G |
600 W Transient Voltage Suppressor 47 V SUR40 Unidirectional; Package: Surmetic 40, Axial Lead; Container: Tape and Reel; Qty per Container: 4000 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
600 Watt Peak Power Surmetic TM -40 Transient Voltage Suppressors
|
ONSEMI[ON Semiconductor]
http://
|
| P6KE200AG P6KE180ARLG ONSEMICONDUCTOR-P6KE180ARLG |
600 Watt Peak Power Surmetic-40 Transient Voltage Suppressors
600 Watt Peak Power Surmetic -40 Transient Voltage Suppressors
600 W Transient Voltage Suppressor 200 V SUR40 Unidirectional; Package: Surmetic 40, Axial Lead; Container: Bulk; Qty per Container: 1000 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SDR968N SDR966P |
60 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 60 A, 600 V, SILICON, RECTIFIER DIODE, TO-259
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| NDL5531P NDL5531P1C NDL5531P1D NDL5531P2C NDL5531P |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信30毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
