| PART |
Description |
Maker |
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| M25P32-VMW6G M25P32-VMP6G M25P32-VMW6P |
4M X 8 FLASH 2.7V PROM, PDSO8 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
4M X 8 FLASH 2.7V PROM, DSO8
|
Numonyx Asia Pacific Pte, Ltd.
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| F25L08PA-50PAIG F25L08PA-100PAIG F25L08PA-100DIG F |
3V Only 8 Mbit Serial Flash Memory with Dual
8M X 1 FLASH 3V PROM, PDSO8 0.200 INCH, ROHS COMPLIANT, SOIC-8
8M X 1 FLASH 3V PROM, PDSO8 0.150 INCH, ROHS COMPLIANT, SOIC-8
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Memory Technology, Inc.
|
| S29AL016J55TFIR10 S29AL016J55FFIR20 S29AL016J55TFI |
1M X 16 FLASH 3V PROM, 55 ns, PDSO48 LEAD FREE, MO-142DDD, TSOP-48
1M X 16 FLASH 3V PROM, 55 ns, PBGA64
1M X 16 FLASH 3V PROM, 55 ns, PBGA48
1M X 16 FLASH 3V PROM, 55 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| AM29LV400B-90REI AM29LV400B-90RFI AM29LV400T-90RFC |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| SST25VF032B11 SST25VF032B-80-4I-QAE |
32 Mbit SPI Serial Flash
4M X 8 FLASH 2.7V PROM, PDSO8
|
Microchip Technology
|
| LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44
1M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO44
2M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO48
256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp.
SHARP ELECTRONICS CORP
|
| SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF |
128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
|
