| PART |
Description |
Maker |
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| TP5025 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
MOTOROLA INC
|
| RF1029 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
MOTOROLA INC
|
| BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
UHF Linear power transistor(UHF 线性功率晶体管)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| SRF820H |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SC1968A SC1968A 2SC1968 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on UHF band Mobile radio applications)
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF power LDMOS transistor
|
Philips Semiconductors
NXP Semiconductors
|
| 2SC5051 2SC5051YZ-TR-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR CMPAK-3
Silicon NPN Epitaxial
|
Renesas Electronics Corporation
|
| 2SC5081 2SC5081ZD-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR CMPAK-4
Silicon NPN Epitaxial
|
Renesas Electronics Corporation
|
