| PART |
Description |
Maker |
| DIM400PHM17-A000 |
400 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| SKIM220GD176D |
IGBT Modules 220 A, 1700 V, N-CHANNEL IGBT
|
Semikron International
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| DIM400XSM65-K000 |
400 A, 6300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
| NGD18N40CLBT4G NGD18N40ACLBT4G NGD18N40CLB12 |
Ignition IGBT, 18 A, 400 V N.Channel DPAK
|
ON Semiconductor
|
| NGB8202AN NGB8202NT4G NGB8202N11 NGB8202ANT4G |
Ignition IGBT 20 A, 400 V, N.Channel D2PAK
|
ON Semiconductor
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| CM200EXS-34SA |
Chopper IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
|
