| PART |
Description |
Maker |
| GS4576C18GL-24T GS4576C18GL-24I GS4576C18L-18T |
DDR DRAM, PBGA144 ROHS COMPLIANT, UBGA-144
DDR DRAM, PBGA144 UBGA-144
|
GSI Technology, Inc.
|
| K4D553235F-GC220 |
8M X 32 DDR DRAM, 0.45 ns, PBGA144
|
|
| K4D263238I-VC400 K4D263238I-VC500 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
4M X 32 DDR DRAM, 0.7 ns, PBGA144 LEAD FREE, FBGA-144
|
Wolfson Microelectronics PLC
|
| K4X51323PC-7EC30 K4X51323PC-8EC30 |
16M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90
16M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
|
Applied Micro Circuits, Corp.
|
| HYB18T256321F-20 |
8M X 32 DDR DRAM, 0.4 ns, PBGA144 11 X 11 MM, ROHS COMPLIANT, PLASTIC, MO-216, TFBGA-144
|
Infineon Technologies AG
|
| HY5DW283222BF HY5DW283222BF-2 HY5DW283222BF-22 HY5 |
128M(4Mx32) GDDR SDRAM
4M X 32 DDR DRAM, 0.6 ns, PBGA144 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144
|
Hynix Semiconductor, Inc.
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NT5DS16M16BW-6K |
16M X 16 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
| HYB18T256160AF-2.5 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84
|
QIMONDA AG
|
| HY5DU28822LT-K |
16M X 8 DDR DRAM, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| V58C2256164SCE5BI |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| HYMD116G725A8-H |
16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
|
