| PART |
Description |
Maker |
| TP2010L-1TA TP2010L-1TR1 TP2410L-1TA TP2410L-1TR1 |
180 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
180 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
| GWM220-004P3-BL GWM220-004P3-SL |
180 A, 40 V, 0.0026 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS CORP
|
| STH240N10F7-2 STH240N10F7-6 |
Ultra low on-resistance
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STH180N10F3-2 |
N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET
|
STMicroelectronics
|
| STH210N75F6-2 |
N-channel 75 V, 0.0027 Ohm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STH400N4F6-2 |
Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package
|
ST Microelectronics
|
| SPEAR-07-NC03 |
1 CHANNEL(S), 100M bps, LOCAL AREA NETWORK CONTROLLER, PBGA180 LEAD FREE, 12 X 12 MM, 1.70 MM HEIGHT, LFBGA-180
|
ST Microelectronics
|
| AGR09180EF |
180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
|
