| PART |
Description |
Maker |
| SL-16E |
No UV or IR light radiation
|
Everlight Electronics Co., Ltd
|
| SL-16D |
No UV or IR light radiation
|
Everlight Electronics Co., Ltd
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| D30VC20 D30VC20F D30VC20W D30VC40F D30VC40W D30VC8 |
Silicon-Twin Rectifiers Center tap 硅双整流器中心自来水
Programmable Indicator Light; Mounting Type:30mm Barrel; Color:Multicolor; Housing Style:Right-Angle; Leaded Process Compatible:No; Light Functions:Red, Green, Yellow Light; Peak Reflow Compatible (260 C):No 硅双整流器中心自来水
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| TLN212 TLN212F |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Corporation
Toshiba Semiconductor
|
| OL-STRIPE |
The light source of the OL-Stripe series is suggested the Everlight LED T5 Cobra light tube.
|
Everlight Electronics Co., Ltd
|
| OL-WEDGE |
The light source of the OL-Wedge series is suggested the Everlight LED T5 Cobra light tube.
|
Everlight Electronics Co., Ltd
|
| IS440F IS440 |
OPIC LIGHT DETECTOR WITH BUILT IN SIGNAL PROCESS-ING CURCUIT FOR LIGHT MODULATION SYSTEM
|
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| SC668EVB |
8 LED Light Management Unit Automatic Dropout Prevention , Ambient Light Sense Input, PWM Dimming, and 4 LDOs
|
Semtech Corporation
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
