| PART |
Description |
Maker |
| HY27US08121B-TIS HY27US16121B-TIP HY27US08121B-FPC |
64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
32M X 16 FLASH 3.3V PROM, 18 ns, PDSO48
64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| HY27SS08121M-FCP HY27SS08121M-FPCP |
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
|
Hynix Semiconductor, Inc.
|
| KFG1216D2M-DED KFG1216Q2M-DEB KFG1216Q2M-DED KFG12 |
RSM, TKF 15K 1/16W 5% 040
FLASH MEMORY 闪存
.025 SOCKET STRIPS
64M X 16 FLASH 1.8V PROM, 76 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
| S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56
MirrorBit Flash Family MirrorBit闪存系列
Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22D SKT PLUG
|
Spansion, Inc.
Spansion Inc.
ETC
|
| DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B |
1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48
1M X 16 FLASH 5V PROM, 120 ns, CQCC48
1M X 16 FLASH 5V PROM, 120 ns, CPGA50
1M X 16 FLASH 5V PROM, 150 ns, CQCC48
|
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0 |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32
|
SILICON STORAGE TECHNOLOGY INC
|
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