| PART |
Description |
Maker |
| SFT6800S.5 |
2 A /500 Volts NPN switching Transistor 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| MPSA42 MPSA43 |
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
TRANSISTOR 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
|
VISHAY SEMICONDUCTORS
|
| MPS6717RLRA MPS6717_D ON2331 MPS6717 |
One Watt Amplifier Transistor(NPN Silicon) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
One Watt Amplifier Transistor 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AE
CASE 29?4, STYLE 1 TO?2 (TO?26AA)
From old datasheet system
|
ON Semiconductor
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| IRFD320R |
500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
HARRIS SEMICONDUCTOR
|
| S8050-C S8050-B S8050-D S8050-C-BP S8050-D-AP |
NPN Silicon Transistors
500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Micro Commercial Components
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| MMPQ2222A FFB2222A FFB2222A_1 FMB2222A MMPQ2222ANL |
500 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Multi-Chip General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD662 2SD662B |
Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SD1478A |
Silicon NPN epitaxial planer type darlington(For low-frequency amplification) 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
|
Panasonic, Corp.
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| MJE13001L-J-T92-B MJE13001-F-T92-K MJE13001-G-T92- |
200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
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