| PART |
Description |
Maker |
| MX23L6414XI-12G |
64M-BIT MASK ROM 4M X 16 MASK PROM, 120 ns, PBGA64
|
Macronix International Co., Ltd.
|
| MX23L4100 MX23L4100MC-10 MX23L4100MC-12 MX23L4100M |
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 100 ns, PDSO40
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 120 ns, PDIP40
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| MX23L12810-1 MX23L12810RC-10 MX23L12810RC-12 MX23L |
CAP TANT LOWESR 33UF 25V 20% SMD 8M X 16 MASK PROM, 120 ns, PDSO48
NEW 128M-BIT (16M x 8 / 8M x 16) MASK ROM FOR TSOP PACKAGE
|
Macronix International Co., Ltd.
PROM
MCNIX[Macronix International]
|
| MX23L3211TC-90 |
32M-BIT MASK ROM (8/16-BIT OUTPUT) 2M X 16 MASK PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| MSM534001E-XXGS-K |
512K X 8 MASK PROM, 80 ns, PDSO32
|
OKI ELECTRIC INDUSTRY CO LTD
|
| MR27V402E-XXXTP |
256K X 16 MASK PROM, 70 ns, PDSO44
|
LAPIS SEMICONDUCTOR CO LTD
|
| K3N5V1000F-DC12 |
1M X 16 MASK PROM, 120 ns, PDIP42
|
|
| MX23C1024QC-12 |
64K X 16 MASK PROM, 120 ns, PQCC44
|
MACRONIX INTERNATIONAL CO LTD
|
| TC531000CP |
128K X 8 MASK PROM, 150 ns, PDIP28
|
|
| TC531000CP-12 |
128K X 8 MASK PROM, 120 ns, PDIP28
|
|
| LH532000BD150 |
256K X 8 MASK PROM, 150 ns, PDIP40
|
SHARP ELECTRONICS CORP
|
|
