| PART |
Description |
Maker |
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 2SK2258-01 |
N-channel MOS-FET 4 A, 1000 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IXFR12N100Q IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STP3N100XI |
1.6 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ST Microelectronics
|
| SDF12N100GAFEGSZ SDF12N100GAFEHD1B SDF12N100GAFEHD |
12 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SOLITRON DEVICES INC
|
| APT10026JFLL_03 APT10026JFLL APT10026JFLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
|
| APT1001R6SLL |
8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-2
|
Microsemi, Corp.
|
|
