| PART |
Description |
Maker |
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PDTD113E PDTD113EK PDTD113ES PDTD113ET PDTD113E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
|
NXP Semiconductors
|
| PDTD123E PDTD123EK PDTD123ES PDTD123ET PDTD123E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
| UNR4223 |
Composite Device - Transistors with built-in Resistor 复合装置-内置晶体管，电阻
HEADER, 14 POS, 0.100C, LA 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic Industrial Solutions
Panasonic, Corp.
|
| CR0402-J/-2R0GLF |
CHIP RESISTOR RESISTOR, 0.0625 W, 5 %, 500 ppm, 2 ohm, SURFACE MOUNT, 0402
|
Bourns, Inc.
|
| PIMC31 |
500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
|
NXP Semiconductors
|
| PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PEMH13 PUMH13 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=4.7千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
| PEMD14 PUMD14 PEMD14-PUMD14-15 |
NPN/PNP resistor-equipped transistors; R1 = 47 kW, R2 = open
NPN-PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN/PNP resistor-equipped transistors R1 = 47 kW, R2 = open
|
NXP Semiconductors N.V.
|
| BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| PDTB113Z PDTB113ZK PDTB113ZS PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k楼?, R2 = 10 k楼?
|
NXP Semiconductors
|
|
