| PART |
Description |
Maker |
| DF2C836P25 DF2C912P04A DF2C912P04B DF2C914P01 DF2C |
Dielectric Devices Dielectric Filters (DF)
|
AEL Crystals Ltd
|
| DF2C948P25 DF2C882P25 DF2C960P01 DF2C866P02 DF2C86 |
Dielectric Devices Dielectric Filters (DF)
|
AEL Crystals Ltd
|
| DRD127BM056A DRD026BF012B MURATAMANUFACTURINGCOLTD |
DISC TYPE DIELECTRIC RESONATOR, 4830 MHz - 5250 MHz
DISC TYPE DIELECTRIC RESONATOR, 23670 MHz - 25940 MHz
DISC TYPE DIELECTRIC RESONATOR, 20030 MHz - 21750 MHz
DISC TYPE DIELECTRIC RESONATOR, 18400 MHz - 20030 MHz
CYLINDRICAL TYPE DIELECTRIC RESONATOR, 9550 MHz - 10420 MHz
DISC TYPE DIELECTRIC RESONATOR, 5700 MHz - 6210 MHz
DISC TYPE DIELECTRIC RESONATOR, 5250 MHz - 5700 MHz
|
MURATA MANUFACTURING CO LTD
|
| 6DFSD-881E-12T |
Dielectric Filters DIELECTRIC BPF
|
TOKO, Inc.
|
| DRD1930856M60B00T DRD1930856M60A00T DRD2701197M20Z |
DISC TYPE DIELECTRIC RESONATOR, 2760 MHz - 3000 MHz
DISC TYPE DIELECTRIC RESONATOR, 1980 MHz - 2150 MHz
DISC TYPE DIELECTRIC RESONATOR, 4200 MHz - 4560 MHz
DISC TYPE DIELECTRIC RESONATOR, 3270 MHz - 3550 MHz
|
MURATA MANUFACTURING CO LTD
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| DRT071R020F031B DRT055R020F024B MURATAMANUFACTURIN |
CYLINDRICAL TYPE DIELECTRIC RESONATOR, 8400 MHz - 9100 MHz
CYLINDRICAL TYPE DIELECTRIC RESONATOR, 11000 MHz - 11900 MHz
DISC TYPE DIELECTRIC RESONATOR, 17500 MHz - 18900 MHz
DISC TYPE DIELECTRIC RESONATOR, 18900 MHz - 20400 MHz
|
MURATA MANUFACTURING CO LTD
|
| 02013A560JAT2A 08051A101BAT4A 08051A101BAT2A 08051 |
C0G Dielectric
C0G (NP0) Dielectric General Specifications
|
AVX Corporation
List of Unclassifed Manufacturers
|
| TSM600-250F-RA |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
