| PART |
Description |
Maker |
| CY14B108L-BA25XI CY14B108L-BA45XI CY14B108L-BA25XI |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44 ROHS COMPLIANT, TSOP2-44
|
Cypress Semiconductor, Corp.
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M29W800DB45N1E M29W800DB M29W800DB45M1E M29W800DB4 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
| M29W800DT70N6E M29W800DT70N6F M29W800DT70N6T M29W8 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
| CY14B116S-BZ25XIES CY14B116N-ZSP45XIES CY14B116N-Z |
16 Mb (2048 K 8/1024 K 16/512 K 32) nvSRAM
|
Cypress
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| IDT72221L15J IDT72221L15JI IDT72221L15PF IDT72221L |
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
| ATTINY4 ATTINY4-TSHR |
8-bit Microcontroller with 512/1024 Bytes In-System Programmable Flash
|
ATMEL Corporation
|
