| PART |
Description |
Maker |
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
| IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A
200V N-Channel B-FET / Substitute of IRF620 & IRF620A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A
200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2111 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2053 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| APT20M11JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Advanced Power Technology
|
| 2SK2070 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
MOS Field Effect Transistor
|
NEC, Corp.
NEC[NEC]
|
| APT20M22B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 100A 0.022 Ohm
|
Advanced Power Technology, Ltd.
|
| APT20M42HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 50A 0.042 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
