| PART |
Description |
Maker |
| 0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
| FPD2250 |
1.5W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| AD311 |
E-pHEMT MMIC
|
RFHIC
|
| FPD7501 |
0.5W POWER PHEMT
|
Filtronic Compound Semiconductors
|
| FPD1000V |
1W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1500-000 FPD1500-000SQ FPD1500-000S3 |
1W POWER pHEMT
|
RF Micro Devices
|
| FPD1500 |
1W POWER PHEMT
|
Filtronic Compound Semiconductors
|
| AE312 |
E-pHEMT MMIC
|
RFHIC
|
