| PART |
Description |
Maker |
| KTC3879 |
0.05A , 35V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2N3133 |
Trans GP BJT NPN 35V 3-Pin TO-18 Box
|
New Jersey Semiconductor
|
| GIF1404 GIF1401 GIF1402 GIF1403 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 12.5x31.5 mm; Packaging: Bulk
FAST EFFICIENT PLASTIC RECTIFIER
|
GE Security, Inc.
GE[General Semiconductor]
|
| BC846AW BC848AW-7-F BC848BW-7-F BC846BW BC847CW-7- |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
TRANS NPN BIPOLAR 45V SOT-323 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR PLASTIC PACKAGE-3
100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR PLASTIC PACKAGE-3
|
Diodes Incorporated
Diodes Inc.
Diodes, Inc.
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 2PD602A 2PD602AQ 2PD602AR 2PD602AS 2PD602ART/R |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 PLASTIC, SC-59, 3 PIN
NPN general purpose transistor
|
NXP Semiconductors N.V.
|
| 2PD1820A 2PD1820AQ 2PD1820AR 2PD1820AS 2PD1820ART/ |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PLASTIC, SC-70, 3 PIN
NPN general purpose transistor
|
NXP Semiconductors N.V.
|
|
