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KTC3875 - 0.15A , 60V NPN Plastic Encapsulated Transistor

KTC3875_3511947.PDF Datasheet

Part No.

KTC3875

Description

0.15A , 60V NPN Plastic Encapsulated Transistor

File Size

589.89K / 3 Page

Maker

SeCoS Halbleitertechnologie GmbH

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: KTC3875

Maker: KEC

Pack: SOT-23

Stock: Reserved

Unit price for :

50: $2.05

100: $1.95

1000: $1.84

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Product Description search : 0.15A , 60V NPN Plastic Encapsulated Transistor

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AP1149 AP1148 2N6590 2N6589 2N6585 2N6587 AP1003 A	TRANSISTOR \| BJT \| PNP \| 70V V(BR)CEO \| 15A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 15A I(C) \| TO-3 TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 10A I(C) \| TO-210AC TRANSISTOR \| BJT \| NPN \| 350V V(BR)CEO \| 10A I(C) \| TO-210AC TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 10A I(C) \| TO-210AC 晶体管\|晶体管\|叩\| 450V五（巴西）总裁\| 10A条一（c）\|10AC TRANSISTOR \| BJT \| PNP \| 450V V(BR)CEO \| 15A I(C) \| TO-210AC TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 15A I(C) \| TO-3	Cypress Semiconductor, Corp.
CFD2375P CFD2375Q	2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.	Continental Device India Limited
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2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2	TRANSISTOR \| BJT \| PNP \| 11V V(BR)CEO \| 50MA I(C) \| TO-24 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 50MA I(C) \| TO-12 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-22 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 100MA I(C) \| TO-9 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 3.5A I(C) \| IST-3RT-1/2 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 50A I(C) \| TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 7.5A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 7.5A I(C) \| TO-82 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 12A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 110V V(BR)CEO \| TO-5 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 100MA I(C) \| TO-5 TRANSISTOR \| BJT \| NPN \| 25MA I(C) \| TO-22VAR TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 25A I(C) \| TO-36 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 90V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 7A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 50V五（巴西）总裁\| 7A条一（c）\| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管\|晶体管\|进步党\| 12V的五（巴西）总裁\| 100mA的一（c）\| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管\|晶体管\|进步党\| 65V的五（巴西）总裁\|5A一（c）\|6 TRANSISTOR \| BJT \| PNP \| 15A I(C) \| TO-36 TRANSISTOR \| BJT \| PNP \| 38V V(BR)CEO \| 15A I(C) \| TO-41	NXP Semiconductors N.V. Microsemi, Corp.
KTA2014 KTA2014-15	-0.15A , -50V PNP Plastic Encapsulated Transistor	SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.

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