| PART |
Description |
Maker |
| IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)
|
International Rectifier, Corp.
|
| IRFR420APBF |
HEXFET Power MOSFET ( VDSS = 500V , RDS(on) max = 3.0, ID = 3.3A ) HEXFET功率MOSFET(减振钢板基本\u003d 500V及的RDS(on)最大值\u003d 3.0ヘ,身份证\u003d 3.3A
|
International Rectifier, Corp.
|
| IRLU014NPBF IRLR014NPBF |
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14, ID = 10A ) HEXFET功率MOSFET(减振钢板基本\u003d 55V的,的RDS(on)\u003d 0.14ヘ,身份证\u003d 10A条)
|
International Rectifier, Corp.
|
| IRG4PSC71U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.67V,@和VGE \u003d 15V的,集成电路\u003d 60A条) 600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier, Corp.
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条) 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| IRG4PC30FD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条) 600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0
|
International Rectifier, Corp.
|
| IRF1405LPBF |
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m, ID = 131A ) 汽车MOSFET的(减振钢板基本\u003d 55V的,RDS(on)\u003d 5.3米ヘ,身份证\u003d 131A章)
|
International Rectifier, Corp.
|
| IRFP23N50L |
Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 0.190ohm,身份证\u003d 23A条)
|
International Rectifier, Corp.
|
| IRFN450 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds(on)\u003d 0.415ohm,身份证\u003d 12A条)
|
International Rectifier, Corp. IRF[International Rectifier]
|
| IRFP450 IRFP450PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 0.40ohm,身份证\u003d 14A条)
|
International Rectifier, Corp.
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