| PART |
Description |
Maker |
| SKIIP04ACB066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 3.1; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge inverter
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Semikron International
|
| X40030S14-A X40030S14-B X40031S14-A X40031S14-B X4 |
THYRISTOR/DIODE MODULE, 50A 1400VTHYRISTOR/DIODE MODULE, 50A 1400V; Voltage, Vrrm:1400V; Current, It av:50A; Case style:SEMIPACK 1; Current, It rms:95A; Current, Itsm:1500A; Voltage, Vgt:3V; Current, Igt:150mA; Centres, fixing:80mm;
Triple Voltage Monitor with Intergrated CPU Supervisor
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Intersil Corporation
|
| SKIIP03NAC066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 2.8; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge rectifier 3-phase bridge inverter
|
Semikron International
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| LS33401111 LY3340-M LG3340 LG3340-KN LG3340-L LG33 |
T1(3mm) LED LAMP T1毫米）发光二极管
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 1N754 1N746 1N759 1N4371 1N4372 1N747 1N748 1N749 |
500mW SILICON ZENER DIODES
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. -2% tolerance.
SIDE GRIPS, PAIR GREY LARGESIDE GRIPS, PAIR GREY LARGE; Colour:Grey; Pack size:2
surface mount silicon Zener diodes
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. -1% tolerance.
|
Jinan Gude Electronic D...
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
娴???洪??靛??ㄤ欢??????
|
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
娴???洪??靛??ㄤ欢??????
http://
Jinan Gude Electronic D...
|
| BD241CFP |
Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA 晶体管|晶体管|叩| 100V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
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Samsung Semiconductor Co., Ltd.
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