| PART |
Description |
Maker |
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| FQA90N15 |
150V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 90 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQU14N15 FQD14N15 |
150V N-Channel MOSFET 10 A, 150 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| APTM50AM24SCG |
150 A, 500 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & SiC parallel diodes MOSFET Power Module
|
Microsemi Corporation
|
| FQU5N15 FQD5N15 FQD5N15TF FQD5N15TM |
150V N-Channel QFET
150V N-Channel MOSFET 4.3 A, 150 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| FDP2570 FDB2570 |
150V N-Channel PowerTrench MOSFET 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
150V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| 2SK2098-01MR 2SK2098 |
N-channel MOS-FET 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
|
