| PART |
Description |
Maker |
| LZ0P3646 LZ0P3641 LZ0P3642 LZ0P3645 |
1/4-type Built-in Lens Color CCD Area Sensors with 350 k Pixels
Safety Light Curtain; Light Curtain Type:Safety; Control Output Type:2PNP OSSD; Number of Beams:60; Protection Height:450mm; Sensing Range Max:6m; Supply Voltage Max:24VDC; Supply Voltage:24VDC RoHS Compliant: NA
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| LNA2702L 0878 LN59 LN59L LN59-LNA2702L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
From old datasheet system
GaAs Bi-directional Infrared Light Emitting Diodes
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| LZ0P3800 |
Safety Light Curtain; Control Output Type:2PNP OSSD; Number of Beams:80; Protection Height:600mm; Sensing Range Max:6m; Supply Voltage Max:24VDC; Supply Voltage:24VDC
1/4-type Built-in Lens Color CMOS Image Sensor with 110 k Pixels
|
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| LNA2W01L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| LN78 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| GL6ZR27 |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| LT1E90A |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Electrionic Components
|
| GL5ZJ44 |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Electrionic Components
|
| LT1ED90A |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Electrionic Components
|
| LNJ211R8ARU LNJ411K8YRU LNJ311G8TRU |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs
|
Panasonic
|
