| PART |
Description |
Maker |
| KVR100X72C2/512 |
512MB 100MHz ECC CL2 DIMM 512MB00MHzECC的CL2的内
|
Samsung Semiconductor Co., Ltd.
|
| KVR400X72RC3A/512 |
512MB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM (64x4) 512MB400MHz的的DDR ECC的注册CL33-3-3）内存（64x4
|
Powerex, Inc.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KVR100X64SC2/64 |
64MB 100MHz Non-ECC CL2 SODIMM 64MB00MHz的非ECC CL2的的SODIMM
|
Samsung Semiconductor Co., Ltd.
|
| KVR100X64SC2/128 |
128MB 100MHz Non-ECC CL2 SODIMM 128MB00MHz的非ECC CL2的的SODIMM
|
Samsung Semiconductor Co., Ltd.
|
| KVR133X64C2512 KVR133X64C2_512 KVR133X64C2/512 |
512MB 64M x 64-Bit PC133 CL2 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| MPMB62D-68KX3 |
PC-2700 CL2.5 184pin DDR DIMM
|
List of Unclassifed Manufacturers
ETC
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HY5DU12422CLTP HY5DU12422CLTP-X HY5DU121622CTP-X H |
CAP.00047UF 16V PPS FILM 0603 2%
512Mb DDR SDRAM 产品512Mb DDR SDRAM
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
